Influence of Localization of Bandgap Fluctuations in a Semiconductor Superlattice on the Characteristics of Current Oscillations

The paper considers how, with a change in the localization of the band gap fluctuations, the amplitude and frequency of the current oscillations change, as well as the threshold voltage value at which the generation of current oscillations begins. Semiconductor superlattices in the current fluctuation generation mode demonstrate frequencies up to several tens of gigahertz, which makes them promising transmitters in infocommunication data transmission systems. It is shown in this work that the localization of the band gap fluctuation fluctuation strongly affects the characteristics of the current, while the influence of fluctuation localization in the case in the presence of an inclined magnetic field and without it differ significantly.