Sputtering Al2O3 as an effective interface layer to improve open-circuit voltage and device performance of Sb2Se3 thin-film solar cells

Sb2Se3 as a promising photovoltaic absorber material is attracting increasing attention. However, high open-circuit voltage (VOC) loss, especially for superstrate structured Sb2Se3 solar cells, is one of the main bottlenecks for improving device efficiency. Here, sputtering aluminum oxide (Al2O3) as an interface layer between CdS and Sb2Se3 was applied in superstrate structured Sb2Se3 solar cells. We proved that the sputtered Al2O3 layer is not fully continuous on the rough CdS film even its thickness has reached 8.8 nm. Then we systematically investigated the influence of the Al2O3 layer on Sb2Se3 material properties and device performances. It is found that the Al2O3 layer can not only effectively inhibit [hk0]-oriented crystal growth and promote [hk1] growth orientation of Sb2Se3 films but also obviously weaken the disordered growth of prominent petal-like shape Sb2Se3 grains and reduce the surface roughness. Further, the Al2O3 layer can also availably passivate interfacial defects at the CdS/Sb2Se3 interface. Consequently, the average power conversion efficiency (PCE) of Sb2Se3 solar cells with an optimal Al2O3 layer thickness is 17.86% higher than that without the Al2O3 layer. Noteworthily, the VOC of Sb2Se3 solar cells is boosted to 0.462 V, which is the highest value in superstrate structured Sb2Se3 solar cells with absorber prepared by conventional physical methods. Finally, a champion efficiency of 6.25% has been achieved in a low-cost Sb2Se3 thin-film solar cell with FTO/CdS/Al2O3/Sb2Se3/Carbon device configuration.