Numerical study of Valence Band states evolution in AlGaAs [111] QDs systems

Metal Organic Vapor Phase Epitaxy (MOVPE) growth in an inverted pyramid provides an opportunity to grow nanostructure with predictable heterostructure potential. In this paper, we investigate numerically the effect of nanostructure geometry and composition on optical properties and Valence Band (VB) character on an example of single Quantum Dot (QD), Quantum Dot Molecules (QDMs). Numerical simulation was carried out using well known Luttinger Kohn model adapter to the particular use case. As a model structure, we take well known explored Quantum Dots (QDs) GaAs/AlGaAs [111] systems in inverted pyramids. We examine optical properties under an external electric field and demonstrate a dynamic way to control the optical polarization properties and their evolution. The ability to control the optical properties of QDs is important for the fabrication of future nano optical devices since QDs are practical sources of single photons. In particular, the control over the energy and polarization of the emitted photons is essential for quantum information technologies.