Specificities of linear Si QD arrays integration and characterization

H. Niebojewski,B. Bertrand,E. Nowak, T. Bédécarrats,B. Cardoso Paz,L. Contamin,P.A. Mortemousque, V. Labracherie, L. Brevard,H. Sahin,J. Charbonnier,C. Thomas, M. Assous,M. Cassé,M. Urdampilleta,Y.-M. Niquet, F. Perruchot, F. Gaillard,S. De Franceschi,T. Meunier,M. Vinet

Symposium on VLSI Technology (VLSI Technology)（2022）

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摘要

The low temperature operation of quantum computing devices implies developing characterization protocols, from extensive statistical tests to targeted device screening at cryogenic temperature. This paper reviews major integration constraints arising in linear Si quantum dots arrays and their implication on both the device operation and electrical characterization.

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关键词

quantum dots,qubits,FDSOI,variability

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