A 0.6 ㎛ Small Pixel for High Resolution CMOS Image Sensor with Full Well Capacity of 10, 000e- by Dual Vertical Transfer Gate Technology.
Symposium on VLSI Technology (VLSI Technology)(2022)
Abstract
In this paper, we developed a 0.6 ㎛ pixel with full well capacity (FWC) of 10,000e-using dual vertical transfer gate (D-VTG) technology. FWC of D-VTG increased by 60% compared to single vertical transfer gate (S-VTG). The D-VTG improved the transfer capability compared to S-VTG by increasing the controllability of TG voltage. We also optimized electron transfer by the gap, depth, and taper slope of VTGs. Through the D-VTG technology, we successfully demonstrated a prototype 200Mp CMOS image sensor (CIS) with 0.6 ㎛ pixels.
MoreTranslated text
Key words
CMOS image sensor,dual vertical transfer gate,small pixel,triple conversion gain,0.6um pixel
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined