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Si-based 1.3 μm InAs/GaAs QD Lasers

Huiwen Deng,Junjie Yang,Hui Jia,Mingchu Tang,Benjamin Maglio,Lydia Jarvis,Sam Shutts,Peter M. Smowton,Siming Chen,Alwyn Seeds,Huiyun Liu

2022 IEEE Photonics Conference (IPC)（2022）

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Abstract
The effects of implementing Ge and Si buffer layers on the performance of Si-based InAs/GaAs quantum dot lasers have been investigated in this paper. The laser performance has been improved significantly by utilising group-IV buffer layers.
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Key words
InAs/GaAs quantum dots,Molecular Beam Epitaxy,Semiconductor Lasers,Silicon Photonics
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