Si-based 1.3 μm InAs/GaAs QD Lasers
2022 IEEE Photonics Conference (IPC)(2022)
Abstract
The effects of implementing Ge and Si buffer layers on the performance of Si-based InAs/GaAs quantum dot lasers have been investigated in this paper. The laser performance has been improved significantly by utilising group-IV buffer layers.
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Key words
InAs/GaAs quantum dots,Molecular Beam Epitaxy,Semiconductor Lasers,Silicon Photonics
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