Implementation of charge plasma based dopingless multi bridge channel MOSFET for enhanced performances

In this article, a distinctive approach for implementing a Multi Bridge Channel (MBC) without doping (dopingless) in a silicon channel has been proposed. The P-type semiconductor is generated using an appropriate metal work function electrode and Charge Plasma (CP) method. The proposed device’s electrical characteristics are simulated in Sentaurus Technology Computer-Aided Design (TCAD) compared with a conventionally undoped double gate MOSFET. The 10 nm channel in the conventional device has been split into two different channel layers, with a thickness of 5 nm each. Almost double the current produced in the single channel device has been obtained due to the charge plasma and MBC concept. The threshold voltage and Ioff for the device are controlled using the metal’s work function, placed above the semiconductor.