Sn distribution in Ge/GeSn heterostructures formed by sputter epitaxy method

Takahiro Tsukamoto, Kento Ikeno,Nobumitsu Hirose,Akifumi Kasamatsu,Toshiaki Matsui,Yoshiyuki Suda

Journal of Crystal Growth（2023）

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摘要

•Ge/GeSn heterostructure was formed using the sputter epitaxy method.•The Sn profiles were investigated using secondary ion mass spectrometry.•The Sn diffusion depended on the growth temperature and the underlayer.•Uniform Sn content GeSn layers were obtained using the sputter epitaxy method.

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关键词

A1. Diffusion,A1. Secondary ion mass spectrometry,A1. X-ray diffraction,A3. Physical vapor deposition processes,A3. Sputtering,B1. GeSn

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