Static Characteristic Analysis and Experimental Acquisition Method of SiC MOSFET

Solar photovoltaic power generation has a great development prospect. The photovoltaic power generation system and power grid need to use inverter as the interface equipment, so photovoltaic inverter is one of the current research hotspots. In order to further improve the performance of the inverter, it is an inevitable trend to apply SiC MOSFET, which has the advantages of high frequency and high efficiency, to the inverter. In order to study and analyze, it is necessary to establish an accurate SiC MOSFET model. In this paper, through the double pulse experiment, considering the static and dynamic characteristics of SiC MOSFET, the parameters obtained provide an effective reference for device modeling.