Chip-Scalable, Graphene-Based Terahertz Thermoelectric Photodetectors

We report room temperature terahertz detection in large-area single layer graphene (SLG) grown by chemical vapor deposition (CVD), integrated in antenna-coupled field effect transistors. We employ different dielectric thin layers as substrate termination (SiO2, Al2O3) and different layers as top encapsulation (HfO2 or large-area CVD-grown hexagonal boron nitride), to investigate the effect of the surrounding layers on SLG thermoelectric properties underpinning photodetection. With these scalable architectures, response times similar to 5 ns and noise equivalent powers similar to 1 nWHz(-1/2) are achieved under zero-bias operation.