Effect of V-doping on electrochemical properties of Gd2O3 thin layers

Undoped and Vanadium doped Gadolinium oxide (x = 2,4,6 at%) thin layers were successfully elaborated on glass substrates using spray pyrolysis technique at an optimized temperature (500 degrees C). The physicochemical characterization of elaborated layers was carried out using X-ray diffractometer, resulting in polycrystalline monoclinic B-type structure for all undoped and Gd2O3:V layers. Scanning Electron Microscopy coupled with Energy Dispersive X-ray Spectroscopy, showed that Gd2O3:V (2 at%) has the roughest surface with an RMS of 26.62 nm and confirmed the presence of all whished elements (Gd, O and V). Finally, the electrochemical properties were investigated by cyclic voltammetry analysis and Electrochemical Impedance Spectroscopy which revealed that vanadium improves the electrochemical performance of Gd2O3 thin layers. Notably, the surface roughness and vanadium low doping concentration (2 at%) lead to a synergy effect in the specific capacitance (208.51 mu F/cm(2)). Hence, the electrode Gd2O3:V (2 at%) proves to be an auspicious enhancement to the electrochemical performance of the supercapacitors based on Gd2O3.