On the Fitting and Improvement of RRAM Stanford-Based Model Parameters Using TiN/Ti/HfO2 /W Experimental Data
2022 37th Conference on Design of Circuits and Integrated Circuits (DCIS)(2022)
摘要
The use of Resistive Random Access Memory (RRAM) devices is becoming pervasive in many applications. In particular, security based primitives can exploit their variability and non-volatility for generating cells for Non-Volatile Secure Memory (NVSM) and Physically Unclonable Function (PUF). Stanford-PKU Resistive Random Access Memory (RRAM) model is a successful model that has been used for simulating different types of RRAM-based systems. However, some circuit-related problems appear when more than one device are coupled together. In this paper, a parameter fitting is performed for a real TiN/Ti/HfO
2
/W RRAMs and the statistical characteristics of the variability in the experimental data are analyzed and included in order to obtain a more reliable model for simulations.
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关键词
RRAM,Cycle-to-Cycle Variability,Nominal Model,Stochastic Behavior,Switching Parameters,Hardware Security
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