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Electrical properties of Pt/TiO2/Pt and Pt/TiO2/TiN structures grown by atomic layer deposition using TTIP and water

Matej Horský,Peter Nádaždy,Edmund Dobročka,Dagmar Gregušová,Alena Seifertová,Ján Dérer,Ján Fedor,Tomáš Ščepka,Boris Hudec

2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)（2022）

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Abstract
Atomic layer deposition (ALD) growth of TiO 2 thin films using TTIP and water is discussed in respect to deposition temperature and resulting crystallinity. Metal-insulator-metal devices with anatase- TiO 2 ALD thin film dielectrics on TiN or Pt are investigated for their robustness against oxidative and non-oxidative thermal treatments, towards their use as oxide Schottky diodes or memristor selectors.
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