Electrical properties of Pt/TiO2 /Pt and Pt/TiO2 /TiN structures grown by atomic layer deposition using TTIP and water
2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)(2022)
Abstract
Atomic layer deposition (ALD) growth of TiO
2
thin films using TTIP and water is discussed in respect to deposition temperature and resulting crystallinity. Metal-insulator-metal devices with anatase- TiO
2
ALD thin film dielectrics on TiN or Pt are investigated for their robustness against oxidative and non-oxidative thermal treatments, towards their use as oxide Schottky diodes or memristor selectors.
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