Low Temperature Parameters of Exchange Interaction of the Polycrystalline Layers in SOI-Structures
2022 IEEE 41st International Conference on Electronics and Nanotechnology (ELNANO)(2022)
Abstract
The article deals with to the study of the peculiarities of charge carrier transfer in polycrystalline films of SOI-structures, doped with boron to concentrations corresponding to the metal-insulator transition. The magnetoresistance of polysilicon in SOI-structures under the action of magnetic fields up to 14 T at temperatures of 4.2 K was studied. A detailed analysis of the results of studies of the magnetic transport properties of poly-Si was performed. It is established that at low-temperature transfer of charge carriers in polycrystalline films there is a hopping conductivity, the parameters of which can be estimated by strong spin-orbit interaction within the framework of the theory of weak localization.
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Key words
polysilicon,silicon on insulator of structure,cryogenic temperature,spin-obit interaction
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