Template-Assisted Selective Epitaxy of InAs on W
2022 Compound Semiconductor Week (CSW)（2022）
Abstract
Results on integration of InAs on W films through template assisted selective epitaxy are presented. The InAs crystals are analysed using SEM, electron beam backscattering and in-situ electrical measurements. A high yield of single crystalline InAs can be obtained for certain template diameters and pitches which demonstrates that this is a viable route to integrate III-V semiconductors in the back-end-of-line of CMOS circuits for added functionality.
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Key words
electron beam backscattering,in-situ electrical measurements,semiconductor thin films,scanning electron microscopy,template assisted selective metal organic vapour phase epitaxial growth,InAs,W
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