Investigation of Drain Noise in Cryogenic InP High Electron Mobility Transistors Using On-wafer S-parameter and Microwave Noise Characterization
2022 Compound Semiconductor Week (CSW)(2022)
Abstract
We report the on-wafer characterization of S-parameters and microwave noise (T
50
) of discrete InP HEMTs over a range of physical temperatures, 40 K – 300 K. From these data, we extract a small-signal model and the drain noise temperature (T
d
) at each bias and temperature. We find that T
50
exhibits a temperature dependence that is incompatible with a fixed T
d
. In contrast, explaining the noise measurements requires T
d
to change from ~2500 K at room temperature (RT) to ~400 K at cryogenic temperatures. This trend is consistent with the predictions of a theory of drain noise based on real-space transfer of electrons from the channel to the barrier [5].
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Key words
High electron mobility transistors,low noise amplifiers,microwave noise,cryogenic electronics
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