A Novel In-memory Matching Circuit Based on Non-volatile Resistive Memory

This paper presents a novel in-memory matching circuit realizing the CAM applications based on Non-volatile resistive memory and 2T-2R bit cell structure that provides reliable lookup operations. The evaluations extended to different NV-RAM types (RRAM, PCRAM, and MRAM) demonstrate the high applicability of our design architecture. The advantages of the CAM matching circuit are verified by Monte Carlo simulations using the 65nm CMOS process technology. Compared to other conventional approaches, our proposed design can reach relatively low sensing latencies, varying from 0.14 to 0.24 ns while maintaining a good level of search error rates.