Novel Field-Plate Integrated Mesa-Type InGaAs/InP Avalanche Photodiode

For the first time, we proposed and investigated a field-plate (FP) integrated mesa-type InGaAs/InP avalanche photodiode (APD). The shallow-mesa structure helps to suppress the surface effect. At the same time, the FP can minimize the electric field crowding at the mesa edges to avoid the pre-mature breakdown, which could be realized via simple fabrication processes. The impact of FP's length, thickness, and material are considered and investigated by the Sentaurus TCAD simulation, where the effectiveness of our structure is confirmed.