Highly Linear Concurrent Tri-Band GaN LNA MMIC for 0.8/1.8/3.6 GHz Applications

Rugged and highly linear GaN HEMT LNAs are interesting in the receiver path for many applications. This paper presents a novel concept of a multiband GaN LNA MMIC chip for the frequencies of 0.8 GHz, 1.8 GHz and 3.6 GHz, realized in coplanar technology, with 0.15 μm-gate AlGaN/GaN HEMTs. The MMIC has a dimension of 4.35×2.15mm ² and provides a small-signal gain of 29 dB at 0.8GHz, and 34 dB at 1.8 GHz and 3.6 GHz with a noise Figure of 4 dB, 2.7 dB and 2.2 dB, respectively. Third-order output intercept point is determined to be 30dBm at 0.8 GHz, 34dBm at 1.8 GHz and 36 dBm at 3.6 GHz, proving that the LNA is well suited for highly linear multiband receiver applications.