Experiments of SiC MOSFETs in high DC bus voltage Boost applications

In high power DC-DC or AC-DC, there is a trend towards increasing the DC bus voltage. In this paper, two boost converter of 1300V DC bus are studied. In the circuit design, a new 2000V SiC MOSFET and a conventional serial-connected 1200V devices are used to achieve a 1300V DC bus requirement. The analytical calculations and experimental results show that the topology of 2000V devices can achieve higher efficiency and power density compared with topology of conventional serial-connected 1200V devices. The implementations of two topologies of boost converters are discussed and the advantages of 2000V SiC MOSFETs for high DC bus voltage applications are demonstrated experimentally.