Interactive Lattice and Process-Stress Responses in the Sub-7 Nm Germanium-Based Three-Dimensional Transistor Architecture of FinFET and Nanowire GAAFET
IEEE Transactions on Electron Devices（2022）
Key words
Stress,Germanium,Transistors,Piezoresistance,FinFETs,Lattices,Silicon,Carrier mobility gain estimation,device stress simulation,FinFET,GAA nanowire (NW),strain engineering
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