SET Characterization of a High and Low Side Gate Driver (RIC7S113) using Pulsed Laser and Heavy Ion Testing

Jeffrey H. Warner, Eric Faraci,Chi Pham,Ani Khachatrian,Dale McMorrow

2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)（2022）

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摘要

The SET response of the RIC7S113 gate driver was characterized using pulsed laser and heavy ion accelerator testing. The SET response between the two methods are compared.

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关键词

Gate driver,H-bridge configuration,Single-event effects testing,pulsed laser testing,heavy ion testing,MOSFET driver,Dragonfly.

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