Micro-Latchup Location and Temperature Characterization in a 7-Nm Bulk FinFET Technology

N. J. Pieper,Y. Xiong,A. Feeley, D. G. Walker,R. Fung,S. -J. Wen,D. R. Ball,B. L. Bhuva

2021 21ST EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS)（2021）

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Key words

Complementary metal-oxide-semiconductor (CMOS),bulk FinFET,alpha particles,temperature,latchup,single-event latchup (SEL),single event effects,cross section,technology computer aided design (TCAD),radiation effects,holding voltage

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