High-brightness broad-area diode lasers with a novel enhanced self-aligned lateral structure
2022 28th International Semiconductor Laser Conference (ISLC)(2022)
摘要
We present broad-area lasers with enhanced self-aligned lateral structure (eSAS) using current-blocking layers optimized for tunnel current suppression, integrated within the p-AlGaAs cladding using in-situ etching and epitaxial regrowth. Lateral leakage is tenfold reduced, for 30% lower threshold, higher peak efficiency, and improved beam parameters.
更多查看译文
关键词
lateral structure,high-brightness,broad-area,self-aligned
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要