Co-integration Process Compatible Input/Output (I/O) Device Options for GAA Nanosheet Technology
ESSDERC 2022 - IEEE 52ND EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC)(2022)
摘要
We benchmark possible device options for gate-all-around input/output devices which are process compatible with core logic gate-all-around (GAA) nanosheet devices. We consider a partial gate-all-around device without metal filling between the sheets) as well as a device with a thin metal gate between the sheets, resulting in work-function mismatch between side- and inner-gates. The results are benchmarked against ideal GAA I/O devices to understand the performance impact for each case. The partial GAA device performs well under certain geometric conditions (W-NS < 30nm). However, the device with thin metal between the sheets shows excellent performance even for large W-NS with large work-function deviation assumptions.
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关键词
Gate-all-around,nanosheet,input-output devices
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