Thermal Disturbance 3D TCAD Simulation Study in Phase Change Memory Device

Phase Change Memory (PCM) is considered one of the best candidates for Flash Memory replacement. Moving from charge storage in traditional Flash to phase change related resistivity in PCM, however, poses new reliability challenges. Indeed, high temperature reached during programming operation of one memory cell may alter the phase state of its neighbours, causing information loss (thermal disturbance). This heat transfer induced phenomenon, must be properly managed through cell and programming signal engineering. In this paper, we performed 3D Technology Computer Aided Design (TCAD) electrothermal simulations of PCM cell using temperature dependant thermal parameters. Obtained results are consistent with what found in the literature for Ge2Sb2Te5 and predict thermal disturbance-free Ge rich GST PCM cells.