A Wideband High-Gain Power Amplifier Operating in the D Band
2022 IFIP/IEEE 30th International Conference on Very Large Scale Integration (VLSI-SoC)(2022)
摘要
In this paper the design, analysis and implementation of a 3-stage, broadband power amplifier (BPA), is presented. The device is suitable for medium-distance wireless and wireline gigabit communication in the D-band (110 – 170 GHz). A pseudo-differential cascode topology is adopted for each stage leading to optimized broadband performance. The PA is integrated in a 0.13 μm SiGe BiCMOS technology with f
T
/f
max
= 250/370 GHz, achieving a saturation output power P
sat
> 9 dBm and a maximum large-signal power gain G
P
> 29.5 dB, over the entire D-band. The chip size is 1.150 × 0.467 mm
2
including all pads.
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关键词
D-band power amplifier,broadband amplifier,differential cascode PA,6G,145 GHz,SiGe PA
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