Dopant Incomplete Ionization Role in SiC Schottky Diode Edge Termination under Current Over-Stress
2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)(2022)
Abstract
Current Crowding phenomenon is one of the most important issues compromising power device reliability. In this work a 4-H SiC Schottky diode with a junction termination extension is studied when this phenomenon occurs. TCAD modelling of the device is detailed and different doping profiles for the n-type buffer layer of the drift zone are simulated. The obtained results are assessed with experimental measurements using the Internal Infrared Laser Deflection and Free-Carrier Absorption techniques. It is highlighted that the incomplete ionization modulates the carrier concentration in the device drift layer and, consequently, it may have a certain role in this process.
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Key words
JTE,SiC,Current Crowding,TCAD,IIR-LD,FCA
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