Structural and electrical properties of TZO MOS capacitors

ZrTiO 2 dielectric thin films were successfully deposited on p-Si(100) substrate using sol–gel spin coating technique. The rotational speed influenced structural, optical and dielectric properties of TZO films were studied thoroughly. A notable hoist in the packaging density and surface roughness of the TZO films were clearly observed in AFM images after annealing. The physical thickness and refractive index of the films increased significantly with respect to rotational speed. The dielectric constant of the proposed ZrTiO 2 MOS devices was also increased. The interface quality at TZO/Si stacks was improved conspicuously in annealed TZO devices.