Layout Dependence of Total Ionizing Dose Effects on 12-Nm Bulk FinFET Core Digital Structures

T. Wallace,M. Spear,A. Privat,J. Neuendank, G. Irumva,D. Wilson,I. Sanchez Esqueda,H. J. Barnaby,M. Turowski,E. Mikkola,D. Hughart,M. J. Marinella,J. Brunhaver, Amos Gutierrez, R. Von Niederhausern, S. Holloway, D. Beltran,J. L. Taggart

IEEE Transactions on Nuclear Science（2023）

Cited 7|Views58

Key words

Layout,FinFETs,X-rays,Transistors,Logic gates,Standards,Inverters,gamma-ray,fin-based field-effect transistor (FinFET),metal-oxide-semiconductor field-effect transistors (MOSFETs),radiation effects,total ionizing dose (TID),transistors,X-ray

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