High Density Integration of Semiconductor Optical Amplifiers in InP Generic Photonic Integration Technology
IEEE Journal of Selected Topics in Quantum Electronics(2022)
摘要
We present experimental studies of semiconductor optical amplifiers (SOA) with a high integration density in an InP generic photonic integration platform. We study the active-passive butt joint integration of dense arrays of active islands with widths ranging from 2 to 30
$\mu$
m, and pitches ranging from 4 to 270
$\mu$
m. We show that there is significant room for increasing the density of active island arrays while keeping a similar growth rate enhancement in between the active islands. The impact of narrow active islands on SOA performance is also studied with an array of Fabry-Pérot lasers fabricated in a commercial generic platform. We demonstrate the manufacturability of lasers with a pitch of 25
$\mu$
m and evaluate individual device performance. Threshold currents and slope efficiencies are not impaired with narrow active island down to 6
$\mu$
m, with values of 19–26 mA and 0.08–0.15 W/A respectively.
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关键词
Butt-joint integration,generic photonic integration,high density,photonic integrated circuits,very-large scale integration
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