Current transport dynamics and stability characteristics of the NiO (x) based gate structure for normally-off GaN HEMTs
JOURNAL OF PHYSICS D-APPLIED PHYSICS(2022)
摘要
The application of p-type oxide typified with NiO (x) as cap layer in AlGaN/GaN high electron mobility transistor for normally-off operation has specific benefits, including etching free fabrication process, high hole density and elimination of Mg dopants diffusion effects. This work presents a device configuration exploration combining the p-NiO (x) gate cap layer and a thin AlGaN barrier layer. Calculation method for the threshold voltage has been discussed, which obtains good consistence with the experimental measurements. In addition, a nitrogen based post-annealing process was developed to improve the film stoichiometry for elevated gate controllability, realizing normally-off operation with enhanced channel conduction capability. The current transport dynamics in the gate stack as coupled with the NiO (x) /AlGaN interface states have also been studied, where a deep level trap was recognized in dominating the gate current characteristics and the gate stability performance under different forward gate bias conditions.
更多查看译文
关键词
normally-off GaN HEMT, p-NiO (x), gate current, gate stability
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要