Bias Stress Stability of ITO Transistors and its Dependence on Dielectric Properties
2022 Device Research Conference (DRC)(2022)
Abstract
Amorphous oxide semiconductors (AOS) can be processed at low-temperature and their field-effect transistors (FETs) have demonstrated very low off-state current [1], offering promise for low-power back-end-of-line (BEOL) applications. Indium tin oxide (ITO) FETs have recently shown good characteristics [2] and good mobility (>50 cm
2
V
−1
s
−1
[3]), but their stability and degradation remain unknown, e.g. given the mobility-stability trade-off in AOS [4], [5]. Here we investigate, for the first time, the influence of gate dielectric material and thickness on ITO-FET stability, which impacts bias stress through trap states. We find that HfO
2
is more stable than Al
2
O
3
as a gate dielectric for ITO FETs, which contradicts previous stability studies of other AOS.
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Key words
bias stress stability,ITO transistors,dielectric properties,amorphous oxide semiconductors,field-effect transistors,off-state current,low-power back-end-of-line applications,BEOL,mobility-stability trade-off,AOS,gate dielectric material,ITO-FET stability,trap states,stability studies,indium tin oxide FET,indium tin oxide,ITO,HfO2
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