Comparative Study on the Performance of 3D DMTG and SMTG III-VON MOSFETs

Here a comparative study is presented on the performances of 3D dual-material triple-gate (DMTG) and single-material triple-gate (SMTG) III-V semiconductors-on-nothing (III-VON) MOSFETs. Different figures of merits of the devices such as surface potential, electric field, threshold voltage, threshold voltage roll-off, subthreshold swing (SS), and drain induced barrier lowering (DIBL) are investigated solving 3D Poisson's equation. The step-like behavior in the surface potential at the gate-metal interface facilitates to decouple the source and channel regions from the drain region for DMTG device structure. Physical parameters (gate length ratio L ₁ : L ₂ , width w, and thickness, z) dependent performance of both devices are also studied. Moreover, three gates with two different gate materials offer better gate control, reduced DIBL, and a threshold voltage roll-off of the device. So, DMTG structure shows better immunity against different short channel effects (SCEs) compared to SMTG structure and could be a suitable candidate for high-speed logic applications.