Schottky barrier height extraction of multi-channel one-dimensional FETs

The Schottky barrier height of fabricated multi-wire and multi-carbon-nanotube field-effect transistors is characterized here with an extraction method based on the Landauer-Biittiker equation. A comparison with results obtained with an extraction method not considering the quasi-ballistic transport in these devices shows that the latter underestimates the barrier height. Issues on the extraction due to non-uniform interfaces are pointed out and further studied and described by a numerical device simulator.