Single-fabrication-step Ge Nanosphere/SiO2 /SiGe heterostructures: A key enabler for realizing Ge MOS devices
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)(2018)
摘要
We report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO
2
/SiGe-channels. An exquisitely controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials was exploited to simultaneously create these heterostructures in a single oxidation step. Single-crystalline (100)/(110) Si
1-x
Ge
x
shells with Ge content as high as x= 0.85/0.35 and with a compressive strain of 3%/1.5% were achieved. Our high Ge-content, highly-stressed SiGe shells feature a high degree of crystallinity, providing a “building block” for the fabrication of Ge-based MOS devices.
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关键词
Ge MOS devices,gate-stacking heterostructures,Ge interstitials,single oxidation step,compressive strain,highly-stressed SiGe shells,Ge-based MOS devices,single-crystalline SiGe shells,strain engineering,crystallinity,Ge-nanosphere gate-SiO2-SiGe-channels,single-fabrication-step Ge Nanosphere-SiO2-SiGe heterostructures,Ge-SiO2-SiGe
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