59.9 mV∙dec-1 Subthreshold Swing Achieved in Zinc Tin Oxide TFTs with in situ Atomic Layer Deposited Al2O3 Gate Insulator Tonglin Lu,Christopher R. Allemang,Tae H. Cho,Neil P. Dasgupta,Rebecca L. Peterson引用 0|浏览3暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要