Effect of Al2O3 Content on High-Temperature Oxidation Resistance of Ti3SiC2/Al2O3

Considering the lack of an effective anti-oxidation protective layer for the oxidation process of Ti3SiC2, an in situ synthesis of Ti3SiC2 and Al2O3 was designed. Thermally stable Al2O3 was used to improve the high-temperature oxidation resistance of Ti3SiC2. Samples without TiC were selected for the oxidation test, and the oxidation morphology and weight gain curves of the oxidized surface in air at 1400 °C are reported. The change in the oxidation behavior occurred 4 h after oxidation. The addition of Al2O3 changed the composition of the oxide layer and compensated for the lack of a dense protective layer during Ti3SiC2 oxidation. Moreover, after 4 h of oxidation, the newly generated Al2TiO5 and the composite layer formed by diffusion were the main reasons for the large difference in the final weight gain between the two sets of samples.