Performance of Flexible In0.7ga0.3as Mosfets by Utilizing Liquid Polyimide (Lpi) Transfer with Effective Mobility of 3,667 Cm2/V-S

•Long-channel flexible In0.7Ga0.3As Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) have been fabricated using liquid polyimide (LPI) transfer and high-κ dielectrics of Al2O3/HfO2 (0.6/2 nm).•The fabricated flexible devices with Lg = 4 µm exhibit stable electrostatic integrity such as VT = -0.12 V, SS = 112 mV/dec. and DIBL = 91 mV/V.•The device with Lg = 4 µm exhibits excellent effective mobility (μn_eff) = 3,667 cm2/V-s at room temperature.•The fabricated devices show uniform gate scaling behaviors of VT = -0.11 to -0.15 V and SS = 108 to 118 mV/decade with various gate lengths ranging from 4 µm to 9.