Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser.
Micromachines（2022）
关键词
Si photonics,InAs,GaAs,Quantum dots,III-V epitaxy,dislocation filter layers,defects,superlattice
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