A Survey of Erase Operation in NAND Flash Memory

Now a days the need of portable computing devices are growing expeditiously. For making these devices light-weight, shock-resistance, energy-efficient, and small in size, the manufacturers need a data storage that can fulfil all the above mentioned features. NAND Flash Memory become the excellent choice for data storage because it has all the required characteristics. “Erase-then-Write” operation is the major concern of the NAND Flash Memory. Before updation of any page, the block containing that page has to erase. The erase operation of Flash-block increase if system generates the frequent update operation. Flash Translation Layer and Write Buffer Cache Management have been proposed to minimize frequent write/update operation. In this paper we have reviewed the major proposed approaches.