Zero Channel Bias Determination of Device Turn-On and the Seebeck Effect in Nanoprobing
International Symposium for Testing and Failure Analysis ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis(2022)
Abstract
Abstract In prior work, it was demonstrated that information about device turn-on can be obtained in a nanoprobing setup which involves no applied bias across the channel. This was performed on nFET logic devices in 7 nm technology and attributed to the Seebeck effect, or heating from the SEM beam. In this work, the experiments are continued to both nFET and pFET devices and on both 22 nm and 5 nm devices. Further discussion about the opportunities and evidence for Seebeck effect in nanoprobing are discussed.
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Key words
seebeck effect,nanoprobing,channel bias determination
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