Wideband E00-E10 Silicon Mode Converter Based on 180 nm CMOS Technology

Mode division multiplexing (MDM) is a promising technology for the capacity enlargement of the optical transmission network. As a key element in the MDM system, the mode converter plays an important role in signal processing. In this work, a wideband E00-E10 silicon mode converter constructed by Y-branch and cascaded multimode interference coupler is demonstrated. The theoretical mode crosstalk is less than –29.2 dB within the wavelength range from 1540 nm to 1600 nm. By 180 nm standard CMOS fabrication, the tested mode conversion efficiency of 91.5% and the crosstalk of −10.3 dB can be obtained at 1575.9 nm. The 3 dB bandwidth is over 60 nm. The proposed E00-E10 silicon mode converter is applicable in mode multiplexing.