Highly Sensitive and Robust 3C-SiC/Si Pressure Sensor with Stress Amplification Structure

•A stress amplification structure employing free-standing SiC sensing elements was utilised to enhance 3C-SiC/Si pressure sensor sensitivity to 0.276 mV/V/kPa.•Analytical and numerical methods show that the stress in the structure is amplified by more than 750% compared to a traditional structure.•The fabricated sensor had a non-linearity of 2.2% and was highly repeatable with a low hysteresis of 0.91%.•The dual 3C-SiC thin film on the sensor provides a strong chemical protective capability due to its chemical inertness.