Photoresists based on bisphenol A derivatives with tert-butyl ester groups for electron beam lithography

Shengwen Hu,Jinping Chen,Tianjun Yu,Yi Zeng,Xudong Guo,Shuangqing Wang,Guoqiang Yang,Yi Li

Journal of Photochemistry and Photobiology A: Chemistry（2023）

引用 3|浏览35

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摘要

•Photoresists based on bisphenol A derivatives (BPA-BU-1 and BPA-BU-2) are developed for electron beam lithography.•Both BPA-BU-1 and BPA-BU-2 resists can obtain 40 nm L/S patterns with higher sensitivity.•The different sensitivity and contrast suggest the effect of substituted positions of acid labile groups in the molecule.

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关键词

Bisphenol A derivative,Structure effect,Chemically-amplified molecular resists,Electron beam lithography

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