III-V on a Si platform for the next generations of communication systems

Compound semiconductors will play a crucial role in reaching the high datarates of future wireless systems operating in the mmWave or sub-THz bands at a decent energy consumption. Their compatibility with a Si platform is desired to enable a high level of integration (i.e., complex functionality), as well as large-volume, low-cost production. We report here the possibilities offered by nanoridge engineering to meet these targets.