Demonstration of Fatigue and Recovery Phenomena in Hf0.5Zr0.5O2-based 1T1C FeRAM Memory Arrays

Recently, a novel, one-transistor one-capacitor (1T1C) type, ferroelectric random-access memory (FeRAM) array was developed, and its operation was experimentally demonstrated. This array was based on ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO), with a capacitor under bitline structure, and was compatible with system-on-chip. In this work, bitline voltage difference distributions were examined via cycling tests and observed to not deteriorate during fatigue and recovery stress, indicating uniform charge trapping and domain de-pinning within the ferroelectric domains in the test chip.