XPS investigation of 5N purity Al thin foils for MEMS devices

Thin Al foils are promising materials for applications in devices of microelectromechanical systems (MEMS). In this work, three foils of high purity (5N) Al with different thickness (10, 50, and 125 mu m) were analyzed by means of X-ray photoelectron spectroscopy (XPS), before and after annealing (720 K for 30 min). XPS surface analysis and depth profiling of chemical composition were performed to investigate the distribution of Al oxide. Electron energy loss spectroscopy (EELS) measurements were also carried out in order to identify the plasmon losses and chemical state of Al. The loss peaks in the 5N-Al thin foils were compared with those of an Al foil of commercial purity (99.95 wt%). The thickness of the oxide layer on the sample surface of all the samples is not constant and oxide is thicker in the samples of high purity than in those of commercial quality. Moreover, the thinnest foils of 5N-Al (10 mu m) exhibit the thinnest oxide layer. These findings have been discussed by considering the size effect, that is, mechanical properties of thin foils are improving as the thickness decreases. The complex morphology of the metal-oxide interface may contribute to enhance the mechanical performances of Al foils with a thickness below similar to 50 mu m, because the free dislocations pile up against the interface which represents an obstacle for their motion hindering plastic deformation. Obtained results suggest that Al foils to be used in MEMS devices should be of high purity and annealed to get a surface completely covered by the oxide layer.