Low-Temperature Chemical Vapor Deposition of SiCN for Hybrid Bonding

2022 International Conference on Electronics Packaging (ICEP)(2022)

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摘要
Low-temperature deposited PE-CVD SiCN has been comprehensively investigated towards the dielectric layer of Die-to-Wafer hybrid bonding. The PECVD SiCN was deposited at room temperature. The characterization of the deposited film and the impact of the plasma activation on the surface has been analyzed.
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关键词
Hybrid bonding,Die-to-Wafer stacking,PE-CVD SiCN
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