Realization of NOR logic using Cu/ZnO/Pt CBRAM

2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)(2022)

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摘要
A method is proposed to realize NOR logic. Unlike existing solutions, the new solution has no requirements on unrealistic device characteristics such as high asymmetry to operating voltages or the small variations. By comprehensive analysis and the fabrication of Cu-based conductive-bridge- RAM, we show the reliably implementation, which paves ways for future low-power reconfigurable computing.
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关键词
in-memory computing,RRAM,NOR logic
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